Spectroscopic Study of BFO Thin Film Deposited on Si (111, 100)
Journal: International Journal of Science and Research (IJSR) (Vol.3, No. 12)Publication Date: 2014-12-05
Authors : Sadhan Chandra Das; Abhijit Majumdar; Sumant Katiyal; Satish Maan; Thoudinja Shripathi;
Page : 1311-1314
Keywords : BiFeO3; XPS; Raman; XRD;
Abstract
We report the thin film deposition of Bix (FeO3) y (x and y is arbitary number) on Si (111) and Si (100) substrate by Pulse laser deposition technique. X-ray diffraction pattern shows that film deposited on Si (100) substrate do not have any single phase of BFO (BiFeO3) rather it has tendency of amorphous structure. Crystallinity evolved after annealing the films at 600C as the film is deposited on Si (111) substrate. X-ray photoelectron spectroscopy (XPS) study reveals the electronic bonds structure and stoichiometry of Bi and FeO3.
Other Latest Articles
- Evaluation of Water Extracts from Seven Sudanese Plants as Natural Insecticides
- Efficacy of Planned Teaching Regarding Care of Patients with Chest Tube Drainage among Nurses
- Efficacy of an Information Booklet on Knowledge Regarding Cardiac Rehabilitation among Clients with Coronary Artery Disease
- Changes in Protein Profile of Bacterial-Challenged Culex Pipiens Larvae
- Calcifyng Nanoparticles (CNPs) in Human Gallstones
Last modified: 2021-06-30 21:15:01