Acoustic Phonon Limited Cross Section for the Capture of an Electron by an Attractive Trap in Semiconductor Inversion Layer
Journal: International Journal of Science and Research (IJSR) (Vol.4, No. 2)Publication Date: 2015-02-05
Authors : A. K. Ghorai;
Page : 1837-1840
Keywords : Semiconductor inversion layer; recombination; acoustic phonon; capture cross section;
Abstract
At low lattice temperature (
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