Carbon Nanotubes Field Effect Transistor: A Review
Journal: International Journal of Science and Research (IJSR) (Vol.4, No. 3)Publication Date: 2015-03-05
Authors : Shaifali Ruhil; Jyoti Sehgal; Komal Rohilla;
Page : 2183-2185
Keywords : CNTFET; NANO TUBE DIAMETER; 3-D STRUCTURE; MOSFET; I-V CHARACTERISTICS; FIXED AND VARIABLE PARAMETERS;
Abstract
In this paper we have focused on the carbon nano tube field effect transistor technology. The advantages of CNTFET over MOS technology are also discussed. The structure and types of CNTFET are given in detail along with the variation of threshold voltage with respect to the alteration in CNT diameter. The characteristics curve between gate to source current and drain to source voltage is plotted. Various fixed and variable parameters of CNT are also focused.
Other Latest Articles
- Development of Wireless RGB LED PWM Controller on Low Cost CPLD
- Knowledge Retrieval from Web Server Logs Using Web Usage Mining
- An Approach to Control Congestion Using Vanets (Vehicular Adhoc Network)
- Access to Schooling in Different Geographical Regions - A Case Study of South 24parganas District of West Bengal
- Analysis of Implicit Type Pulse Triggered Flip Flop
Last modified: 2021-06-30 21:34:49