Complementary Metal-Oxide Semiconductor: A Review
Journal: International Journal of Science and Research (IJSR) (Vol.4, No. 4)Publication Date: 2015-04-05
Authors : Komal Rohilla; Ritu Pahwa; Shaifali Ruhil;
Page : 1043-1047
Keywords : CMOS structure; Power consumption; Leakage currents; VTCMOS; MTCMOS;
Abstract
In this paper we have focused on the complementary metal-oxide semiconductor technology. This paper covers overview of power consumption sources and discusses the techniques for reduction of power dissipation in high performance designs. Power dissipation is very serious matter in CMOS technology. The first section contains introduction, second section contains review of CMOS, third section contains overview of power consumption sources and leakage current mechanisms, fourth section contains techniques to reduce power dissipation, and the last section presents the conclusion and references.
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