Comparative Study on Logic Gates Using Bulk Transmission Gate and Double Gate Transmission Gate

In VLSI technology, field effect transistors are promising candidate to extend moor-s law in coming years its stated that the number of die or the number of chip will be double in every 18 month. Recently double gate MOSFET has been demonstrated to allow better performance in means of power and delay as power and performance have become the predominant concern for chip designer. In this paper, we are represent the study on logic gates using bulk transmission gate and double gate transmission gate and compare the results in between the two in the form of power i. e leakage power, static power and dynamic power in 45nm technology. So we characterized and validate arithmetic logic gates that are AND gate, XOR gate using the platform cadence virtuoso in 45 nm technology. And the experimental results show that using double gate transmission gate we get the better performance that means low leakage power dissipation.