Structural and Resistive Property of Cobalt/Silicon Thin Film as a Function of Thickness
Journal: International Journal of Science and Research (IJSR) (Vol.4, No. 5)Publication Date: 2015-05-05
Authors : Sumana Kayal; Ranjeet Kumar Brajpuriya; Anil Kumar;
Page : 2542-2544
Keywords : AFM; resistivity; thin film; thickness; parabolic;
Abstract
The paper presents the structural and resistive property of Co/Si thin film as a function of thickness. The synthesis of Co/Si thin film has done by Resistive Heating. The structural property that deals here is of Three-Dimensional measurement of the sample. The technique used for the structural measurement is Atomic Force Microscopy (AFM). The resistive property is measured by Four-probe technique. Morphology of the thin film surface has been measured by AFM. The roughness shows drastic change with the increase of the thickness. The resistive behaviour shows parabolic carve against thickness.
Other Latest Articles
- A Review on Spectrum Mobility for Cognitive Radio Networks
- A Compact Broadband Rectangular Microstrip Antenna with Slotted Ground
- Performance Evaluation of Clustering Algorithms for IP Traffic Recognition
- Constraint Induced Movement Therapy (CIMT) for Children with Hemiplegic Cerebral Palsy to Improve Upper Extremity Function: Pilot Study
- BER Analysis of Wavelet Based OFDM Using Different Modulation Techniques
Last modified: 2021-06-30 21:46:31