Design and Simulation of NOT and NAND Gate Using Hybrid SET-MOS Technology

Single Electron Transistor (SET) is an advanced technology for future low power VLSI devices. SET has high integration density and a low power consumption device. While building logic circuits that comprise only of SETs, it is observed that the gate voltage at the input must be higher than the power supply of SET for better switching characteristics. This limitation of SET in the power and gate supply voltages makes it practically inappropriate to build circuits. An approach to overcome this problem, hybridization of SET and CMOS transistor is implemented. In this paper, different types of hybrid SET-MOS circuits are designed such as hybrid SET-MOS inverter and NAND gate is designed and implemented. All the circuits are verified by means of PSpice simulation software version 16.5