Effect of Substrate Temperature on Electric Properties of II-VI Solid Solution of ZnSe Thin Films Prepared By Spray Pyrolysis

ZnSe thin films prepared by spray pyrolysis by using aqueous solution of zinc chloride and selenium dioxide of 0.1 M of each at different substrate temperature 3000C, 3250C, 3500C, & 3750C. From the Arrhenius plot, each curve shows two regions. Activation energy is found to be low at lower temperature and it is increasing for higher temperature for each prepared thin films of different temperature. This may be shallow trapping state due to interstial zinc or selenide vacancies are expected to dominates the extrinsic conductivity near room temperature where as higher temperature, deep traps state influence are probable appears.