A Review of Resistor Switching Devices for Memory and Neuromorphic Computing Applications
Journal: International Journal of Nano Studies & Technology (IJNST) (Vol.09, No. 01)Publication Date: 2020-09-29
Authors : Hamsavahini R Saurabh Nagar Kaustab Ghosh;
Page : 135-139
Keywords : ;
Abstract
High-density memories are required for various applications in the area of signal and image processing, Digital system design, and neural networks. Researchers are looking for an intermediate solution to fill the gap between DRAM and Flash NAND in the memory hierarchy. The development of Resistive Switching Technologies (RRAM) proposes a potential solution to this demand for fast, low cost, high density, and non-volatile memory. This paper discusses the schematic of Resistive Switching (RS) devices, The Principle and operation of memristor crossbar array as memory, potential applications of memristors as memory, Logic design applications, and neuromorphic computations.
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