The Effective Impact of Magneto-Resistive RAM (MRAM) in Memory Optimization
Journal: International Journal of Science and Research (IJSR) (Vol.10, No. 10)Publication Date: 2021-10-05
Authors : October Lambert Kekebou Erefaghe;
Page : 26-28
Keywords : Magnetic; resistive; optimization; charge pump;
Abstract
The objective of this paper is to propose the use of magnetic-resistive random access memory for memory optimization. This proposed paper will lead to the improvement of memory quality and efficiency, it?s smaller in size, consumes less memory, consumes less power, executes more rapidly or performs fewer input/output operations. In terms of power consumption, magnetic-resistive random access memory doesn?t require refresh because it retains its memory with the power turned off but also there is no constant power-draw. Writing to the MRAM needs more power than the read operation and the voltage is kept at constant meaning charge pump is not required, and all these is contributing to fast operational speed, longer lifespan and low consumption of power.
Other Latest Articles
- Homoeopathic Treatment of Diarrhoea
- Computerized Study of Flat Plate Collector and its Installation
- A Study to Assess the Knowledge Regarding Risk Factors of Osteoarthritis among Patients Attending Outpatient Department in Ministry of National Guard Health Affairs (MNGHA), Alahsa, Kingdom of Saudi Arabia
- Online Student Academic Performance Monitoring and Evaluation System of the Quirino State University
- Comparison of Attitude towards Physical Education between Male and High School Female Subject Teachers
Last modified: 2022-02-15 18:46:47