LAPLACE TRANSFORM CALCULATION OF DARK SATURATION CURRENT IN SILICON SOLAR CELL INVOLVING EXCITONS EFFECTS

In this work, the resolution of the differential equation system governing the electrons and excitons densities in the base region of a silicon solar cell is derived, using the Laplace transform. To check the validity of this method, a comparative study is made between the present results for the saturation current density and those obtained by R. Corkish and al in similar conditions with the same cell parameters. Numerical simulations for a silicon solar cell in the dark without polarization allows to obtain the excess minority carriers and excitons densities, the saturation current density according to various parameters of the cell such as the depth of the base, the doping level, the binding coefficient between electron and exciton, the lifetime and the recombination velocity etc.