Review on 75 305 Ghz Power Amplifier MMIC with 10 14.9 dBm Pout in a 35 nm InGaAs mHEMT Technology

The broadband power amplifier monolithic microwave ICs with an operating frequency of more than 200 GHz is demonstrated. It is fabricated in a 35 nm gate length metamorphic high electron mobility transistor. The power amplifier produces a minimum output power of 10 dBm with an average value of 12.8 dBm at 75 to 305 GHz. A peak output power of 14.9 dBm and power added efficiency of 6.6 is obtained at 200 GHz. Padmam Kaimal "Review on 75-305 Ghz Power Amplifier MMIC with 10-14.9 dBm Pout in a 35-nm InGaAs mHEMT Technology" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-6 | Issue-2 , February 2022, URL: https://www.ijtsrd.com/papers/ijtsrd49251.pdf Paper URL: https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/49251/review-on-75305-ghz-power-amplifier-mmic-with-10149-dbm-pout-in-a-35nm-ingaas-mhemt-technology/padmam-kaimal