Increasing the Saturated Output RF Power for RF Amplifiers Using a Passive

This paper presents a design and an implementation of a special technique to increase the saturated output RF power of semiconductor RF amplifiers using passive components. This approach allows using cheap, small size and low power semiconductor RF amplifiers in the circuitry instead of a single high power TWT. Also it will help us to overcome the heat problems since this method depends on passive components. In this paper the design, the simulation and the hardware implementation are introduced, where the measurements of the microstrip-line, the insertion loss and the saturated output RF power before and after increasing the output power are reported. The measurement results verified that the approach of the technique is indeed functional, and the efficiency was enhanced while increasing the output RF power. The paper also reviews a comparison between the saturated RF output power of the (HMC453ST89E) before and after using the passive technique where it shows how the RF power level will increase when using the Passive techniques.