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OPTIMIZATION OF SILICON SOLAR CELL BASE THICKNESS, WHILE ILLUMINATED BY A LONG WAVELENGTHMONOCHROMATIC LIGTH: INFLUENCE OF BOTH LORENTZ LAW AND UMKLAPP PROCESS
Journal: International Journal of Advanced Research (Vol.10, No. 08)Publication Date: 2022-08-16
Authors : Sega Diagne Ousmane Sow Gora Diop Richard Mane Ibrahima Diatta Djiby Ndiongue Youssou Traore Lemrabott Habiboullah Mamadou Wade; Gregoire Sissoko;
Page : 133-143
Keywords : Silicon Solar Cell Diffusion Coefficient Absorption coefficient Surface Recombination Velocity Optimum Base Thickness Lorentz and Umklapp Processes;
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Abstract
The optimum thickness of a silicon solar cell base is determined using phenomelogic parameters, which are the minority carriers diffusion coefficient and the recombination velocity at the back side, influenced by Lorentzs law and the Umklapp process.The results obtained are consistent with the generation of minority charge carriers deep in the base by a monochromatic light of long wavelength.
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Last modified: 2022-09-06 20:11:10