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THE CALCULATING THE FET BASED SCHOTTKY HYDRODYNAMIC MODEL R. A. BAGUTDINOV, R.K. NARIMANOV

Journal: Science Journal "NovaInfo" (Vol.2, No. 32)

Publication Date:

Authors : ; ;

Page : 1-4

Keywords : FET SCHOTTKY HYDRODYNAMIC MODEL; NUMERICAL METHODS; PARAMETRIC STUDIES; THE MOVEMENT OF ELECTRONS;

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Abstract

Is this paper were performed parametric studies on the value of the gate potential, allowing determining its impact on the character of the electron transmission. Used two-dimensional hydrodynamic numerical model of GaAs field-effect transistors with a Sc

Last modified: 2015-04-25 23:37:28