THE CALCULATING THE FET BASED SCHOTTKY HYDRODYNAMIC MODEL R. A. BAGUTDINOV, R.K. NARIMANOV
Journal: Science Journal "NovaInfo" (Vol.2, No. 32)Publication Date: 2015-04-01
Authors : Bagutdinov Ravil Anatolevich; Narimanov Rinat Kazbekovich;
Page : 1-4
Keywords : FET SCHOTTKY HYDRODYNAMIC MODEL; NUMERICAL METHODS; PARAMETRIC STUDIES; THE MOVEMENT OF ELECTRONS;
Abstract
Is this paper were performed parametric studies on the value of the gate potential, allowing determining its impact on the character of the electron transmission. Used two-dimensional hydrodynamic numerical model of GaAs field-effect transistors with a Sc
Other Latest Articles
Last modified: 2015-04-25 23:37:28