COMPARATIVE STUDY OF SHEET RESISTANCE BETWEEN SILICON DOPED N AND SILICON P IN DARK AND NO APPLY VOLTAGE
Journal: International Journal of Advanced Research (Vol.11, No. 04)Publication Date: 2023-04-14
Authors : Alassane Diaw Papa Touty Traore Mor Ndiaye; Issa Diagne;
Page : 852-855
Keywords : Sheet Resistance Silicon Doped Dark Voltage;
Abstract
The aim of the study is to compare the sheet resistance between silicon doped n and silicon doped p at dark and no apply voltage.The sheet resistance Ïsq at equilibrium is determined from the net ionised doping concentration and the mobility of the majority carriers.The calculator then determines the sheet resistance and the junction depth of the surface diffusion at outdoor temperature..The sheet resistance of silicon with background doped boron has great sheet resistance compared to silicon with background doped phosphorus.
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Last modified: 2023-05-27 15:21:06