TEMPERATURE EFFECT OF ELECTRICAL PROPERTIES OF CIGS SOLAR CELL

In this paper we are interested in studying the copper?indium?gallium?selenium (CIGS) solar cells sandwiched between cadmium sulfide (CdS) and ZnO as buffer layers, and Molybdenum (Mo). Thus, we report our simulation results using the capacitance simulator (SCAPS) in terms of layer thickness, absorber layer band gap and operating temperature to find out the optimum choice. An efficiency of 20.61% (with Voc of 635.2mV, Jsc of 44.08 mA/cm2 and fill factor of 0.73) has been achieved with CdS used as buffer layer as the reference case. It is also found that the high efficiency CIGS cells with the low temperature were a very high efficiency conversion.