DESIGN AND IMPLEMENTATION OF SRAM 6T FOR 2 BYTES

SRAM has become a significant segment in numerous VLSI Chips because of their huge stockpiling thickness and little access time. SRAM has gotten the theme of impressive research because of the fast improvement for low power, low voltage memory structure during late years because of increment interest for scratch pad, workstations, IC memory cards and specialized gadgets. SRAMs are broadly utilized for versatile and PC applications as both on chip and off-chip recollections, in view of their accessibility and low backup spillage. The fundamental target of this paper is assessing execution regarding Power utilization, deferral and Signal to Noise Margin of existing 6T SRAM cell in 45nm and 180nm innovation.