SCHMITT TRIGGER BASED NVSRAM CELL FOR LOW POWER MOBILE SYSTEMS

The power saving in mobile systems is a big concern. It has attracted the attention of most of the researchers. In addition to this, process variation plays an important role in device performance, especially at lower technology nodes and low supply voltages. The application of non-volatile memory (NVM) devices with SRAM cell is found as an effective solution for power consumption. Also, the Schmitt Trigger (ST) action helps in maintaining the device performance under process variations. To attain both the features, a non-volatile SRAM (nvSRAM) cell using eleven transistor and one memristor (11T1M) is presented in this work. In addition to this, Schmitt Trigger (ST) action is used to improve the stability of the proposed design. From simulations, it is observed that the proposed 11T1M nvSRAM cell offer minimum deviation in delay performance and better stability in comparison to considered cells. The leakage power consumption of proposed design is also minimum.