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Analytic Description of Short Channel Effects in Fully Depleted Double Gate and Cylindrical, Surrounding Gate MOSFETs Survey Paper
Journal: International Journal of Trend in Scientific Research and Development (Vol.9, No. 3)Publication Date: 2025-07-21
Authors : Yashaswini M A Suchi C Sinchana V Bhat Tanuja C;
Page : 715-720
Keywords : Short channel effect; quantum transport; Photon scattering; Nanotube FETs; low leakage transistors; double gate;
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Abstract
URL: https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/80031/analytic-description-of-shortchannel-effects-in-fullydepleted-doublegate-and-cylindrical-surroundinggate-mosfets-survey-paper/yashaswini-m-a
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Last modified: 2025-07-22 18:10:38