Effects Of Recrystallization Annealing On Hsi65-1.5 Silicon Brass Aided By Electric Pulse Treatment

Abstract An online production of Electric pulse induced recrystallization of a cold-rolled HSi65-1.5 alloy was studied under different annealing temperature and electric pulse parameters. The microstructure morphologies were observed by the optical microscopy and hardness test. Electric pulse treatment EPT substantially accelerated recrystallization of the cold-rolled HSi65-1.5alloy within a short time of several seconds at relatively low temperature as well as suppressed precipitation of 26946- phase the primary elongated strip 26946-phase broke up and almost all of the 26946 phase was transformed into structure consisting of equiaxed twinned grains of alpha solid solution. Based on quantitative analysis we conclude that the decreased of the recrystallization temperature of the rolled HSi65-1.5 alloy under EPT is due to the short treating time high heating rate accelerated nucleation and lower final dislocation density. The optimum EP treatment parameters where found to be at annealing temperature of 300C pulse voltage 700V pulse frequency 15Hz and pulse time 120s.