Sensing Behavior Of CuO-Doped SnO2 Thick Film Sensor For H2S Detection

Abstract The effect of CuO doping on the electrical resistance and the sensitivity of thick film gas sensors based on CuO- doped 1 2 and 5 by wt. SnO2has been investigated by us. A suitable gas sensor structure wasfabricated on 126733x126733 alumina substrate using thick film technology. The fabricated sensors reaction with H2S gas 250 ppm-1000 ppmwas tested in the temperature range of 150- 35026730C. At 25026730C the sensor with 5 CuO doping was found to be most sensitive for H2S gas .The electrical resistance and the sensitivity were increased by increasing the concentration of CuO. The substitution of Sn4 by Cu2 leads to the creation of oxygen vacancies. The increased oxygen deficiency is believed to be responsible for enhancing the resistance.