THERMODYNAMIC MODELLING OF HIGH-TEMPERATURE PROCESSES IN SYSTEM SI ? O ? C

On the basis of the PC Terra program complex the full thermodynamic modeling of phase of balance according to the threefold chart Si-O-C in a temperature interval of 1573-2173 K and P = 0,1 mPa is carried out. In addition, the re-sults of the full thermodynamic analysis (FTA) of high-temperature processes in system Si ? O ? C are given in the ar-ticle. Results of modeling showed that process of restoration of silicon dioxide consists generally of two stages: the first stage ? formation of silicon carbide; the second stage ? SiO2 and SiO restoration by silicon carbide.