Two-Terminal Low-temperature Poly-Si Thin Film Non-Volatile Memory
Journal: International Journal of Science, Engineering and Innovative Research (Vol.3, No. 3)Publication Date: 2015-09-10
Authors : Thomas Attia Mih; Shashi Paul;
Page : 6-10
Keywords : Poly-Silicon; Non-volatile Memory Devices; PECVD; Two terminal memory devices; emerging memory devices;
Abstract
We have developed a low temperature growth methodology of silicon structures for applications in flash memory. In this article, we report on the memory behaviour of poly-Si films grown by this technique at 300 °C, investigated through electrical measurements on metal-insulator-semiconductor (MIS) and metal-insulator-metal (MIM) devices containing these films. Current-voltage (I-V) and Capacitance Voltage (C-V) behaviour of these devices exhibit hysteresis not seen in devices made of only a-Si and/or Si3N4. The devices also exhibit capacitance switching behaviour and non-volatility by the application of different pulse voltages for write, read and erase operations. All process temperatures from growth of films to fabrication of devices were ? 300 °C. If well harnessed, this novel growth method could be promising for memory applications in systems-on-glass, plastics and even in 3-D flash memory widely viewed as the only practical solution to some of the down-scaling challenges of memory devices.
Keywords- Poly-Silicon, Non-volatile Memory Devices, PECVD, Two terminal memory devices, emerging memory devices
Other Latest Articles
- Pre-stress and Free Vibration Optimization of Composite Ocean Current Turbine Blade
- Improving the deformation warping European regulatory battery holder by using mold analysis and Taguchi method
- Buckling Analysis of an Ocean Current Turbine Blade
- Considerations in the Design and Manufacturing of a Load Cell for Measuring Dynamic Compressive Loads
- Comparison of DFIG and SEF-DFIG operation in wind turbine systems
Last modified: 2015-09-18 17:38:48