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Two-Terminal Low-temperature Poly-Si Thin Film Non-Volatile Memory

Journal: International Journal of Science, Engineering and Innovative Research (Vol.3, No. 3)

Publication Date:

Authors : ; ;

Page : 6-10

Keywords : Poly-Silicon; Non-volatile Memory Devices; PECVD; Two terminal memory devices; emerging memory devices;

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Abstract

We have developed a low temperature growth methodology of silicon structures for applications in flash memory. In this article, we report on the memory behaviour of poly-Si films grown by this technique at 300 °C, investigated through electrical measurements on metal-insulator-semiconductor (MIS) and metal-insulator-metal (MIM) devices containing these films. Current-voltage (I-V) and Capacitance Voltage (C-V) behaviour of these devices exhibit hysteresis not seen in devices made of only a-Si and/or Si3N4. The devices also exhibit capacitance switching behaviour and non-volatility by the application of different pulse voltages for write, read and erase operations. All process temperatures from growth of films to fabrication of devices were ? 300 °C. If well harnessed, this novel growth method could be promising for memory applications in systems-on-glass, plastics and even in 3-D flash memory widely viewed as the only practical solution to some of the down-scaling challenges of memory devices. Keywords- Poly-Silicon, Non-volatile Memory Devices, PECVD, Two terminal memory devices, emerging memory devices

Last modified: 2015-09-18 17:38:48