Some New Results of Quantum Simulator NEMO-VN2
Journal: Progress in Nanotechnology and Nanomaterials (Vol.2, No. 3)Publication Date: 2013-07-31
Authors : Dinh Sy Hien;
Page : 55-63
Keywords : Spin Transistor; Spin Field Effect Transistor; Graphene; Graphene Field Effect Transistor; Current; Voltage Characteristics;
Abstract
We have developed NEMO-VN2, a quantum device modeling tool that simulates a wide variety of quantum devices including the resonant tunneling diode, the single electron transistor, the molecular field effect transistor, the carbon nanotube field effect transistor. In the simulator the non-equilibrium Green’s function is used to perform a comprehensive study of emerging nanoelectronics devices. The program has been written by using graphic user interface of Matlab. NEMO-VN2 uses Matlab to solve Schrodinger equation with Poisson equation to get current-voltage characteristics of quantum devices. In the report, we describe the upgraded simulator, provide a short overview of the theoretical methodology using nonequilibrium Green’s function for modeling of nanoscale devices and typical simulations related to spin field effect transistor and graphene field effect transistor used to illustrate the capabilities of the NEMO-VN2.
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Last modified: 2013-08-15 11:42:57