COMPARATIVE STUDY OF DRAM AND MRAM (STT-MRAM)

High memory latency and limited memory bandwidth have proven to be the biggest problems for the performance of computer system on various computer applications. To solve this problem designers have made an effort to increase the amount of on chip memory. Till now we have being using SRAM for various applications. But now-a-days alternate technologies like DRAM and STT-MRAM are progressing to enhance the on chip memory capacity at the same cost of higher latency. Various types of memory systems are developed using DRAM (1Tdram, e-dram) and MRAM (STT-MRAM, Thermal MRAM).The performance of each type of memories has been developed in the following paper. In this paper parameters like cell area, power and reliability have been considered. The most important parameter read and write time gives us a clear picture of throughput and latency of such memories systems. The conclusions of the paper tells us that both types of memories have advantage over the other in some or the other aspect. But if we compare these results with the existing SRAM results for the same parameters we come to know that these memory systems are more advantageous than SRAM. The results are very much helpful for design and verification with maintenance purposes.