Preparation and study of Cu2O thin film at low temperature by Chemical vapor deposition (CVD) route

ABSTRACT In this study cuprous oxide (Cu2O) nanoparticle has been synthesized at low temperature of 200oC by chemical vapor deposition (CVD) route. The complex compound Cu (acac)2 was used as precursor sublimated at temperature of 275oC and deposited over a glass substrates. The synthesized films have been characterized by using X-ray diffraction (XRD) analysis, field emission electron microscope (FE-SEM), atomic force microscopy (AFM) and transmission electron microscope (TEM) analysis.