INVESTIGATION OF VOLTAMPERE CHARACTERISTICS OF DIODIC STRUCTURE ON BASE OF THIN FILMS OF RHENIUM CHALCOGENIDES

Journal: International Journal of Engineering Sciences & Research Technology (IJESRT) (Vol.5, No. 3)

Publication Date: 2016-03-30

Authors : E.A.Salakhova; D.B.Tagiyev; P.E.Kalantarova; N.N. Khankishiyeva;

Page : 795-803

Keywords : KEYWORDS: rhenium chalcogenides; semi-conducting materials; volt-ampere characteristics; electronic;

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Abstract

Were investigated electro-physical properties of thin layers of rhenium chalcogenides’ alloys, their dynamical and static volt-ampere characteristics During the investigation of static and dynamical ampere-voltaic characteristics of rectifying contact of aluminium and rhenium chalcogenides’ alloys the switching effects were found. The studying of the data got at present work shows the structure based on alloy of rhenium with chalcogenides AVC with S- and N sections of NR with straight and reverse current directions.

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INVESTIGATION OF VOLTAMPERE CHARACTERISTICS OF DIODIC STRUCTURE ON BASE OF THIN FILMS OF RHENIUM CHALCOGENIDES

Abstract

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