Transport Studies of AlGaN/GaN High Electron Mobility Transistor Structures

The Gallium Nitride High Electron Mobility Transistor (HEMT) is showing great promise towards development of the military radar systems, communication systems, high voltage and power systems and electronic surveillance systems. In this paper, the transport properties of AlGaN/GaN HEMT structures i.e. Two dimensional electron gas (2DEG) sheet charge density and 2DEG mobility at room temperature (300K) are studied with the results obtained from theoretical 1D Poisson simulation and Hall effect for used in bio-sensing applications.