Voltage Enhancement Using Solid State Devices
Journal: International Journal of Engineering Research (IJER) (Vol.5, No. 3)Publication Date: 2016-03-01
Authors : Pinnelli Sai Krishna Kaushik; G.Lakshminarayana;
Page : 197-202
Keywords : MOSFET; IGBT; High voltages; A.C generator;
Abstract
The main objective of this project is to develop a simulation circuit to generate a high-voltage DC from the low-voltage DC by Marx generator principle. It develops an output approximately four times that of the input voltage by using capacitor and MOSFET/IGBT combination. For eg. if the input voltage applied is around 12v volts DC, then the output voltage is around 48 volts DC.This demo project consists of 4 stages and each stage is made of one MOSFET/IGBT, two diodes, and one capacitor. The MOSFET/IGBT is used as a switch; diodes are used to charge the capacitor at each stage without power loss. A pulse generator generates pulses for the capacitors to charge in parallel during on time. During off time of the pulses, the capacitors are brought in series with the help of MOSFET/IGBT switches. Finally, the number of capacitors used in series (4 in our project) add up the voltage to approximately 3 (4 capacitors-1 capacitor) times the supply voltage. This system structure gives compactness and easiness to implement the total system from a DC supply of 12V to get approximately (40V-50V).This concept in future can be extended to Generate High voltages (KV) using more number of capacitors. This technique is adopted for insulation testing of the electronic components, wires, gadgets, etc.
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Last modified: 2016-06-18 19:18:58