PHOTOSENSITIVE HETEROSTRUCTURE OF GaTe ? THIN NANOSTRUCTURED DIELECTRIC ? InSe

Heterostructure p-GaTe ? n-InSe was prepared by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. Topology of surfaces of GaTe and InSe layered crystals were studied by using AFM-images. It is shown that there was formed thin oxide dielectric layer of Ga2O3 on the heterojunction p-GaTe ? n-InSe. The direct branch of the current-voltage characteristics of the heterostructure show high diode properties. Sensitivity spectral area of pGaTe ? n-InSe heterostructure was identified and the characteristics of its energy band diagram were shown.