Equivalent Electric Model of the Junction Recombination Velocity limiting the Open Circuit of a Vertical Parallel Junction Solar Cell under Frequency Modulation
Journal: IPASJ International Journal of Electronics & Communication (IIJEC) (Vol.4, No. 7)Publication Date: 2016-08-04
Authors : Fatimata BA; Boureima SEIBOU; Mamadou WADE; Marcel Sitor DIOUF; Ibrahima LY; Grégoire SISSOKO;
Page : 001-011
Keywords : ;
- Equivalent Electric Model of the Junction Recombination Velocity limiting the Open Circuit of a Vertical Parallel Junction Solar Cell under Frequency Modulation
- JUNCTION RECOMBINATION VELOCITY DETERMINATION INITIATING THE SHORT-CIRCUIT AND LIMITING THE OPEN CIRCUIT OF A MONOFACIALE SOLAR CELLS CONTAINING THIN FILM Cu(In,Ga)Se2(CIGS) UNDER HORIZONTAL ILLUMINATION IN STATIC MODE
- Comparative Study of Parallel Vertical Junction Solar Cell Photovoltages
- Influence of the Depth base on the Electrical parameters of a Parallel Vertical Junction Silicon Solar Cell under Polychromatic illumination
- OPTIMUM THICKNESS DETERMINATION TECHNIQUE AS APPLIED TO A SERIES VERTICAL JUNCTION SILICON SOLAR CELL UNDER POLYCHROMATIC ILLUMINATION: EFFECT OF IRRADIATION
Abstract
ABSTRACT In this paper, a study of the junction recombination velocity limiting the open circuit (SFoc) of a silicon solar cell under polychromatic illumination, infrequency modulation is presented. From the continuity equation, the density of minority charge carriers in the base and the photovoltage are determined. The study of this photovoltage, according to the junction recombination velocity, allows us to determine the junction recombination velocity limiting the open circuit. An equivalent electric model is proposed by means of representations Bode and Nyquist diagrams of SFoc. Keywords: Junction recombination velocity, Photovoltage, Bode and Nyquist diagrams, Impedance spectroscopy
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Last modified: 2016-08-04 15:42:09