INVESTIGATING THE PROPERTIES OF INDIUM-FREE AMORPHOUS OXIDE SEMICONDUCTOR FILMS FOR POTENTIAL TFT APPLICATION ON FLEXIBLE SUBSTRATES

RF-sputtered gallium tin zinc oxide (GSZO) thin fims for application in transparent amorphous oxide semiconductors (TAOSs) have been investigated. Morphological, structural, electrical, optical properties and its mechanical robustness have been studied on polyethylene naphthalate (PEN) substrates using variety of characterization techniques. The fims deposited on PEN substrates retained amorphous structure even after annealing for 12 hours in vacuum at 200°C. The optical band edge is ~ 3.3eV, greater than ZnO fims. Best μHall of 3 cm?V- 1s- 1 have been observed on annealed GSZO fims at 200°C. The critical radii of bending improve from 14.5 mm to 11 mm with decreasing RF power of deposition from 90W to 80W, indicative of its suitability for flxible electronics.