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PERFORMANCE OF LEAKAGE POWER MINIMIZATION TECHNIQUE FOR CMOS VLSI TECHNOLOGY

Journal: ICTACT Journal on Communication Technology (IJCT) (Vol.3, No. 2)

Publication Date:

Authors : ; ;

Page : 557-562

Keywords : Leakage currents; current comparator; charge pump; VLSI; LPMT;

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Abstract

Leakage power of CMOS VLSI Technology is a great concern. To reduce leakage power in CMOS circuits, a Leakage Power Minimiza-tion Technique (LPMT) is implemented in this paper. Leakage cur-rents are monitored and compared. The Comparator kicks the charge pump to give body voltage (Vbody). Simulations of these circuits are done using TSMC 0.35?m technology with various operating temper-atures. Current steering Digital-to-Analog Converter (CSDAC) is used as test core to validate the idea. The Test core (eg.8-bit CSDAC) had power consumption of 347.63 mW. LPMT circuit alone consumes power of 6.3405 mW. This technique results in reduction of leakage power of 8-bit CSDAC by 5.51mW and increases the reliability of test core. Mentor Graphics ELDO and EZ-wave are used for simulations.

Last modified: 2013-12-06 13:25:46