THE DEEP CENTERS IN THE SILICON DOPED WITH ZIRCONIUM

By means of methods of non-stationary capacitance spectroscopy of the deep centers and photocapacitance we have studied the defects formation in silicon with Zr impurity. It was revealed that diffusional introduction of Zr to Si leads to formation of three deep levels with the fixed ionization energy of Ес-0.22 eV, Ес-0.42 eV and Еv+0.30 eV, and the last two deep levels prevail. It was revealed that efficiency of formation of the deep centers connected with Zr atoms increases with increase in diffusion temperature of Tdif and in cooling speed after diffusion υcool: the more Tdif and υcool, the more concentration of deep levels connected with Zr