FEATURES OF THE FORMATION OF SCHOTTKY FIELD TRANSISTORS WITH A SELF-CONDENSED GATE ON THE BASIS OF NITRIDE AND TUNGSTEN SILICIDE
Journal: International Scientific Journal "Internauka" (Vol.1, No. 42)Publication Date: 2018-01-31
Authors : Novosjadly Stepan; Humemjuk Nasar;
Page : 80-82
Keywords : gallium arsenide; Schottky field transistors; tungsten nitride; tungsten silicide;
- FEATURES OF THE FORMATION OF SCHOTTKY FIELD TRANSISTORS WITH A SELF-CONDENSED GATE ON THE BASIS OF NITRIDE AND TUNGSTEN SILICIDE
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Abstract
In this paper, the peculiarities of the technological processes of the formation of Schottky field transistors by arsenidgale technology are considered. Namely the technology of formation of Schottky field transistors with a self-locking gate on the basis of nitride and tungsten silicide.
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