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THE EFFECT OF PULSED ALL - ROUND COMPRESSION ON THE CURRENT - VOLTAGE CHARACTERISTICS OF SURFACE - BARRIER DIODES Sb p Si Mn Au
Journal: Science and world (Vol.1, No. 51)Publication Date: 2017-11-23
Authors : Tursunov I.G.;
Page : 14-16
Keywords : semiconductor; s ilicon; doping; diode; pressure;
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Abstract
The impulse effect of hydrostatic pressure on the current - voltage characteristics of surface - barrier diode structures of the Sb p Si Mn Au type is investigated. The carried out rese arches have shown that the temperature behavior of the reverse current under the pulsed action of compression on the diode over a wide voltage range (up to 20 V) is not substantially dependent on the value of the reverse voltage.
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Last modified: 2018-08-10 16:48:10