THE FORMATION OF THE DEFECTIV E CENTERS IN SILICON, DOPED BY THE TITANIUM

Using the methods of capacitance spectroscopy, we have studied the processes of defect formation in Si with Ti admixture. It is revealed that diffusive introduction of Ti impurity to Si leads to formation of three deep levels with the fixed ionization energies: E c - 0.20 eV, E c - 0.27 eV an d E v +0.30 eV. It is shown that the last two levels with ion- ization energies of EC - 0.27 eV and EV+0.30 eV belong to different states of atoms of titanium in silicon.