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RESEARCH BY METHOD OF RUTHERFORD BACKSCATTERING DISTRIBUTION OF ION - IMPLANTED ATOMS OF Fe IN Si
Journal: Science and world (Vol.1, No. 53)Publication Date: 2018-01-29
Authors : Egamberdiyev B.E. Rakhmanov A.T. Mallayev A.S. Rozikov S.;
Page : 57-60
Keywords : impurities; profiles; influence; Rutherford backscattering; thermal annecling; implanted atoms; thin layers; depth; irradiation dose; activation tempe rature.;
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Abstract
The article presents the research results of distribution profiles of implanter Fe atoms in Silicon depending an irradiation dos and temperature of annealing by method of Rutherford backscattering. The influence of thermal annealing on distribution of Fe and other impurities, particularly oxygen was studied. The possibility of use of Rutherford backscattering for analysis of both concentration distribution of dopant impurities and interaction of impurities.
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Last modified: 2018-08-27 21:05:23