STUDY OF THE EFFICIENCY OF DEEP CENTERS FORMATION, CREATED BY CHROMIUM IMPURITIES IN SILICON

In this paper, we investigate the processes of defect formation in silicon, doped with chromium. It is established that diffusive introduction of Cr impurity in the n - Si leads to the formation of three deep level s with fixed energy of ionization: Е с - 0.21 eV, Е с - 0.41 eV and Е с - 0.51 eV; in p - Si is two levels of Е v +0.20 eV and Е v +0.41 eV. It has been shown that chromium atoms in silicon are only related to levels of Е с - 0.41 eV and Е с - 0.51 eV, Е v +0.20 eV.