THE INVESTIGATION OF IMPURITY NANOINCLUSIONS OF COBALT IN MONOCRYSTALS OF SILICON

The electron-probe microanalysis was used to investigate the structural constitution and chemical composition of impurity nanoinclusions in p-Si samples obtained by the diffusion method at a temperature of 1523 K. It was found that the morphology of impurity nanoinclusions depends on the value of the sample cooling rate, after diffusion annealing. It is established that the main part of the atoms of the dopant, as well as technological impurities, is located in the center of the nanoinclusions. It is assumed that during the formation of impurity nanoinclusions, the Fe and Cu atoms participate in the role of a catalyst.