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INFLUENCE OF WOLFRAMIUM ON CHARACTERISTICS OF SILICON METAL-INSULATOR-SEMICONDUCTOR STRUCTURES

Journal: Science and world (Vol.1, No. 67)

Publication Date:

Authors : ;

Page : 11-14

Keywords : silicon; impurity; wolframium; deep level; irradiation; -quanta; radiation dose; radiation defect.;

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Abstract

The effect of wolframium impurity on the characteristics of silicon MIS structures was investigated using capacity spectroscopy and high-frequency capacity-voltage characteristics. It has been found that the presence of electro-active W atoms in the silicon wafer of MDP structures leads to an increase in Nss structures and the appearance of peaks associated with the levels of tun wolframium in silicon.

Last modified: 2019-04-05 19:11:57