Effects of Metal Gate Electrode and HfO2 in Junction less Vertical Double Gate MOSFET

The scaling of CMOS technology in to nano-meter regime requires alternative device structures in overcoming a number of short channel effects and leakage current. The formation of PN junction between the source/drain and channel become a fabrication challenge beyond 32 nm CMOS technology. A lot of novel double gate MOSFET structures have been proposed and widely investigated by number of researchers [1]. The Junctionless double gate vertical MOSFET has been proposed recently. The Junctionless VMOS is free from variety of challenges related