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Effects of Metal Gate Electrode and HfO2 in Junction less Vertical Double Gate MOSFET

Journal: International Journal of Scientific Engineering and Technology (IJSET) (Vol.3, No. 5)

Publication Date:

Authors : ; ; ;

Page : 671-674

Keywords : DIBL; Junctionless Vertical Double Gate MOSFET (JLVMOS); DIBL (Drain Induced Barrier Lowering); leakage current (IOFF); Subthreshold Swing (S. Swing); TCAD Tool;

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The scaling of CMOS technology in to nano-meter regime requires alternative device structures in overcoming a number of short channel effects and leakage current. The formation of PN junction between the source/drain and channel become a fabrication challenge beyond 32 nm CMOS technology. A lot of novel double gate MOSFET structures have been proposed and widely investigated by number of researchers [1]. The Junctionless double gate vertical MOSFET has been proposed recently. The Junctionless VMOS is free from variety of challenges related

Last modified: 2014-09-28 00:24:33