Studying of Optoelectronic Properties for (NiO)x(MnO)1-X/Si Solar Cell

We report the (NiO) x- ( MnO) 1-X thin films with different x content (0, 0.1, 0.2, 0.3) prepared by pulse laser deposition technique at RT using Nd: YAG laser of =1064 nm, average frequency 6 Hz and pulse duration 15 ns. These films were deposited on Si substrate to from the (NiO) x- ( MnO) 1-XHeterojunction for Solar Cells. The optical absorption spectra showed that all films have direct energy gap. The band gap energy of this films decreased with increasing x content. I-V measurements for heterojunctions. The short-circuit current (Isc), open circuit voltage (Voc), and fill factor ( F. F) have been studied, Also from I-V measurements it is observed that The best achieved efficiency was obtained around 3.1 % at (x=0.3) and also the value efficiency for (NiO) x- ( MnO) 1-Xheterojunction increases with increasing of x content for all samples.