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4H-SiC P-i-N Diodes: Development of Technology and Research of Microwave Switches Based on it
Journal: International Journal of Science and Research (IJSR) (Vol.8, No. 10)Publication Date: 2019-10-05
Authors : A.A. Lebedev; A.V. Kirillov; L.P. Romanov; A.V. Zubov; A.M. Strelchuk;
Page : 981-986
Keywords : SiC; P-i-N diodes; microwave;
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Abstract
The technology of microwave p-i-n diodes based on silicon carbide (SiC) has been developed. Using this diodes manufactured switches for 3-cm range. It is shown that the developed devices have an operating power of about 10 times the operating power of switches based on Si diodes with an equal base thickness of 5 microns. Outlined ways to further optimize the technology of these devices.
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