Characteristics of ZnO-based semiconductor ceramics doped with GeO2 and PbOJournal: International Journal of Science and Research (IJSR) (Vol.4, No. 2)
Publication Date: 2015-02-05
Authors : Osama A. Desouky; Mostafa M. H. Khalil;
Page : 848-853
Keywords : ZnO based ceramics; semiconductors; varistors;
The effect of GeO2 and PbO on physical, microstructure, and the electrical properties of ZnO based ceramics is investigated. A decrease in water absorption was recorded with rise in maturing temperature and increase in time of soaking. A minimum water absorption was displayed in specimens fired at 1000 oC for 2 hours. The average grain size decreases initially as GeO2 content increases up to 2 mol %. The grain size of ZnO decreases greatly, as the Ge-rich phase inhibits grain growth ZnO decreases. The decrease of capacitance in (pf), dielectric constant (-) and consequently increase (AC) conductivity with increasing frequency (1-20) KHz was investigated.
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