Electrical Properties of II-VI Solid-Solution of ZnSe Thin Films by Spray Pyrolysis

Solid-solution of II-VI group of semiconducting thin films have important due to opto-electronic devices. The conducting type was tested by hot probe method was of n-type semiconductor. From the Arrhenius plot, the conductivity increases as the temperature increases. Grain size of the the films increases as temperature increases which indicate the optical band gap increases. Hence grain boundary effect decreases. The shallow trapping states preferably due to interstial zinc or selenide vacancies are expected to dominates extrinsic conductivity, whereas higher temperature deep traps state influence are appears.