Structure and Electrical Properties of CdO doped TiO2 Thin Films Prepared by Pulsed Laser Deposition

(TiO2)1-x(CdO)x thin films have been deposited at different annealing (423 and 523)K with different concentration of CdO of x= (0.0, 0.05, 0.1, 0.15 and 0.2) Wt. % onto glass substrates by pulsed laser deposition technique (PLD) Nd-YAG laser with ?=1064nm, energy=800mJ and number of shots=500. X-ray diffraction (XRD) results reveals that the deposited (TiO2)1-x(CdO)x thin films polycrystalline with tetragonal structure and many peaks (110), (101), (111) and (211) were appear The temperatures dependence of the electrical conductivity and the activation energy at temperature ranging from (293-473) K of the as-deposited and films annealed at different annealing temperatures have been studied. The results show that as the film concentration of and conductivity increases, while the activation energy (Ea1, Ea2) decreases. Both, the annealing and composition effects on Hall constant, charge carrier concentration, Hall mobility were investigated. Hall Effect measurements show that all films have n- type charge carriers.