ResearchBib Share Your Research, Maximize Your Social Impacts
Sign for Notice Everyday Sign up >> Login

Study on Performance of 22nm Single Gate and Multi-Gate MOSFET

Journal: International Journal of Scientific Engineering and Research (IJSER) (Vol.4, No. 10)

Publication Date:

Authors : ; ; ;

Page : 42-45

Keywords : Circuit density; FinFET; Double Gate MOSFET; Threshold; Electric Field.;

Source : Downloadexternal Find it from : Google Scholarexternal


Scaling down of the MOSFET for better circuit density give rise to issues of poor gate control over the dependent current. Many short channel effects contribute towards indeterminist response of the drain current and eventually poor circuit performance. This effects can be overcome if the short channel effects are minimized by gate excitations and by using multiple such gates and there by providing better control over the device parameters. The gate electric field in single gate MOSFET is decreased, and multiple such gates are grown on same substrate so as to have better control over drain current, called as Multi-Gate MOSFET or FinFET. We have recreated the 22nm single gate MOSFET and same channel length multi-gate MOSFET, their performance through various parameter comparisons are evaluated and studied.

Last modified: 2021-07-08 15:43:18