SYNTHESIS AND CHARACTERIZATION STUDY OF HGXCR2-X S4 COMPOSITE THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION TECHNIQUE

The ternary thin films of composite HgxCr2-xS4 (x = 0.6) have been deposited by simple chemical bath deposition (CBD) technique on glass substrate. The thin films have been deposited at optimized conditions pH at 10 0.1, bath temperature 650C, deposition time 120 minutes. The films were uniform and adherent to glass substrates. They were characterized by structural, optical, and electrical measurement techniques. According to their X-ray diffraction patterns HgxCr2-xS4(x = 0.6) films are crystalline with band gap of 2.4 eV. Scanning electron micrographs showed that the substrates were well covered with films no cracks or pinholes were observed. The electrical resistivity of the films is found to be 1.3703 x 103 Ω-cm to 2.1243 x 103 Ω-cm at temperature range 3030k to 4230K. According to thermoelectric power measurements HgxCr2-xS4(x = 0.6) thin films are of n-type nature.